To understand the partial discharge characteristics of the insulating material of high-voltage insulated gate bipolar transistor (IGBT) devices under the impact of the broadband pulse electric stress,a platform for partial discharge measurement is established. The effects of voltage amplitude,pulse repetition frequency,rising edge time and pulse width on the partial discharge characteristics of polyimide film are systematically studied. The results show that as the voltage amplitude increases from 3 kV to 11 kV,the amplitude of the partial discharge signal at the rising edge of the pulse increases,while the discharge delay decreases. When the pulse repetition frequency increases from 50 Hz to 100 kHz,the discharge delay of the rising edge increases but the amplitude of local amplified signal keeps almost unchanged. When rising edge time increases from 136 ns to 300 ns,the discharge delay increases and becomes more dispersed,and the amplitude of the partial discharge signal gradually decreases. Compared to the case of the pulse width of 1 μs,the amplitude of the partial discharge signal becomes larger and the discharge delay becomes smaller in the case of the pulse width of 500 ns. This result provides an important scientific basis for the insulation aging and condition monitoring of solid-state switches in high-voltage high-power electronic devices.