Research on reverse recovery characteristics of high voltage thyristor induced by voltage pulse has important significance in parameter design, fault protection and test detection of converter valve.The thyristor two-dimensional semiconductor simulation model is built according to the actual structure of the thyristor.The static breakdown characteristics and reverse recovery current characteristics are simulated based on the carrier drift diffusion model.The validity of the model is checked by comparing with the experimental results.On the basis of the above, the device-circuit simulation hybrid model is established and the similarities and differences of the current density in the thyristor are analyzed and compared.The results show that voltage pulse can lead to the false triggering of the thyristor during the reverse recovery.The false tirggering voltage increases with the time at which voltage pulse is applied.