Due to the demand for high-power, high-frequency and high-temperature operating environments, silicon carbide devices have become the representative of next-generation semiconductor devices.However, the spike problem of silicon carbide (SiC)devices has been restricting the development of this new device.The silicon carbide metal oxide Semiconductor Field Effect Transistor (SiC MOSFET)is taken as the research object, and the research on the peak problem is carried out from the aspect of using the silicon carbide device in the inverter, and the SiC is analyzed.The MOSFET generates peaks and oscillations during the switching process.By increasing the RC snubber circuit to optimize the spike and oscillation of the silicon carbide, the RC snubber circuit can be used to reduce the spikes and oscillations generated by the SiC device.Multiple sets of experiments are used to fit the data curve, and the equation relationship between the snubber capacitor and the snubber resistor in the RC snubber circuit is determined.