文章摘要
基于TCAD的脉冲作用下晶闸管反向恢复特性仿真研究
Research on Reverse Recovery Characteristics of High voltage Thyristor Induced by Voltage Pulse Based on Physical-Circuit Hybrid Simulation Model
投稿时间:2019-11-27  修订日期:2020-03-07
DOI:
中文关键词: 高压晶闸管  电压脉冲  反向恢复  混合模拟
英文关键词: High voltage thyristor  Voltage pulse  Reverse recovery  hybrid simulation
基金项目:
作者单位E-mail
陈炫宇 西安交通大学 17625763@qq.com 
陶风波 国网江苏省电力有限公司电力科学研究院  
徐阳 国网江苏省电力有限公司电力科学研究院  
庞磊 西安交通大学 plein911@163.com 
张乔根 西安交通大学  
摘要点击次数: 154
全文下载次数: 105
中文摘要:
      研究暂态脉冲电压作用下高压晶闸管反向恢复特性对于换流阀参数设计、故障保护以及试验检测等方面具有重要意义。本文首先参照晶闸管实际结构,建立了晶闸管二维半导体仿真模型,基于载流子漂移扩散模型求解,仿真获得了晶闸管静态击穿特性和反向恢复电流特性,通过与实验结果进行对比,验证了仿真模型的有效性。在上述基础上,建立了半导体器件-电路仿真混合模型,仿真表明:反向恢复期间电压脉冲易导致晶闸管误触发,误触发电压随脉冲施加时刻后移而升高,并对比分析了正常导通和误触发导通时晶闸管内部电流密度变化的异同。
英文摘要:
      Research on reverse recovery characteristics of high voltage thyristor induced by voltage pulse has important significance in parameter design, fault protection and test detection of converter valve. In this paper, the thyristor two-dimensional semiconductor simulation model is build according to the actual structure of the thyristor.The static breakdown characteristics and reverse recovery current characteristics are simulated based on the carrier drift diffusion model. The validity of the model is checked by comparing with the experimental results. On the basis of the above, the device-circuit simulation hybrid model is established. The results show that voltage pulse can lead to the false triggering of the thyristor during the reverse recovery.The false tirggering voltage increases with the time at which voltage pulse is applied. And the similarities and differences of the current density in the thyristor are analyzed and compared.
查看全文   查看/发表评论  下载PDF阅读器
关闭